收藏本站
March 2009
FDD6796A / FDU6796A_F071
N-Channel PowerTrench ? MOSFET
25 V, 5.7 m ?
Features
Max r DS(on) = 5.7 m ? at V GS = 10 V, I D = 20 A
Max r DS(on) = 15.0 m ? at V GS = 4.5 V, I D = 15.2 A
100% UIL tested
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r DS(on) and fast
switching speed.
RoHS Compliant
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
D
G
S
D-PAK
G
D
S
Short-Lead I-PAK
(TO-251AA)
G
S
(TO-252)
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
25
±20
40
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
67
20
A
-Pulsed
150
E AS
Single Pulse Avalanche Energy
(Note 3)
40
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
42
3.7
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +175
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.6
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD6796A
FDU6796A
Device
FDD6796A
FDU6796A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
?2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDD6N20TM MOSFET N-CH 200V 4.5A DPAK
FDD6N25TF MOSFET N-CH 250V 4.4A DPAK
FDD6N50FTF MOSFET N-CH 500V 5.5A DPAK
FDD6N50TM MOSFET N-CH 500V 6A DPAK
FDD7N20TM MOSFET N-CH 200V 5A D-PAK
FDD7N60NZTM MOSFET N-CH 600V 5.5A DPAK-3
FDD8424H_F085 MOSFET N/P-CH DUAL 40V DPAK-4
FDD8424H MOSFET DUAL N/P-CH 40V TO252-4L
相关代理商/技术参数
FDD6N20 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET
FDD6N20TF 功能描述:MOSFET 200V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N20TM 功能描述:MOSFET 200V N Chanel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N25 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
FDD6N25TF 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N25TM 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6N50 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDD6N50F 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5.5A, 1.15ヘ